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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 16 N 4
DOI: https://doi.org/10.15407/spqeo16.04

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 313-321.
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Graphene layers fabricated from the Ni/a-SiC bilayer precursor
A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 322-330.
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Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 331-335.
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Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method
D.M. Zayachuk, O.S. Ilyina, D. Kaczorowski, V.I. Mikityuk, and V.V. Shlemkevych
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 336-343.
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Generation of optical vortices in rotating uniaxial crystal for light propagation along the perpendicular to its optical axis
B.V. Sokolenko, A.F. Rubass, A.V. Volyar
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 344-348.
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Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 349-353.
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Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites
M.L.Trunov, P.M. Lytvyn, P.M. Nagy, O.S. Oberemok, M.O. Durkot, A.A. Tarnaii, I.V. Prokopenko, V.M. Rubish
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 354-361.
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Is there any future of optical discs?
A.A. Kryuchyn, V.V. Petrov, S.O. Kostyukevych, K.V. Kostyukevych, A.A. Kudryavtsev, N.L. Moskalenko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 362-365.
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Studying anisotropic properties of longitudinal inhomogeneous nondepolarizing media with elliptical phase anisotropy
I.S. Kolomiets, S.N. Savenkov, Ye.A. Oberemok, A.S. Klimov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 366-373.
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Nonadditive changes in conductivity of micro PDLC under the influence of carbon nanotubes and magnetic nanoparticles
P. Kopcansky, M. Timko, Z. Mitrova, V. Zavisova, M. Koneracka, N. Tomasovicova, L. Tomco, O.V. Kovalchuk, V.M. Bykov, T.M. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 374-378.
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Reflection loss minimization for a ZnO/CdS/CuInSe2 photovoltaic cell
Abdelhakim Mahdjoub and Lazhar Hadjeris
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 379-381.
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Effect of 1.9-MeV electron irradiation on characteristics of reactively-pressed TiB2–TiŃ ceramic composites
I.N. Totsky, A.Yu. Popov, V.A. Makara
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 382-386.
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Author Index
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 387-397.
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