Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 16 N 4
DOI: https://doi.org/10.15407/spqeo16.04

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Kladíko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 313-321.
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Graphene layers fabricated from the Ni/a-SiC bilayer precursor
A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 322-330.
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Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 331-335.
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Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method
D.M. Zayachuk, O.S. Ilyina, D. Kaczorowski, V.I. Mikityuk, and V.V. Shlemkevych
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 336-343.
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Generation of optical vortices in rotating uniaxial crystal for light propagation along the perpendicular to its optical axis
B.V. Sokolenko, A.F. Rubass, A.V. Volyar
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 344-348.
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Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 349-353.
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Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites
M.L.Trunov, P.M. Lytvyn, P.M. Nagy, O.S. Oberemok, M.O. Durkot, A.A. Tarnaii, I.V. Prokopenko, V.M. Rubish
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 354-361.
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Is there any future of optical discs?
A.A. Kryuchyn, V.V. Petrov, S.O. Kostyukevych, K.V. Kostyukevych, A.A. Kudryavtsev, N.L. Moskalenko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 362-365.
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Studying anisotropic properties of longitudinal inhomogeneous nondepolarizing media with elliptical phase anisotropy
I.S. Kolomiets, S.N. Savenkov, Ye.A. Oberemok, A.S. Klimov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 366-373.
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Nonadditive changes in conductivity of micro PDLC under the influence of carbon nanotubes and magnetic nanoparticles
P. Kopcansky, M. Timko, Z. Mitrova, V. Zavisova, M. Koneracka, N. Tomasovicova, L. Tomco, O.V. Kovalchuk, V.M. Bykov, T.M. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 374-378.
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Reflection loss minimization for a ZnO/CdS/CuInSe2 photovoltaic cell
Abdelhakim Mahdjoub and Lazhar Hadjeris
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 379-381.
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Effect of 1.9-MeV electron irradiation on characteristics of reactively-pressed TiB2ĖTi— ceramic composites
I.N. Totsky, A.Yu. Popov, V.A. Makara
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 382-386.
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Author Index
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.4. P. 387-397.
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