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Semiconductor
Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N
4. P. 317-324.
References 1. H. Morkoc, Handbook of Nitride Semiconductors and Devices: Electronic and Optical Processes in Nitrides. Berlin, Wiley-VCH, 2008.2. P. Ruterana, M. Albrecht, J. Neugebauer, Nitride Semiconductors: Handbook on Materials and Devices. Berlin, Wiley-VCH, 2003. https://doi.org/10.1002/3527607641 3. V.P. Kladko, S.V. Chornen'kii, A.V. Naumov, A.V. Komarov, M. Tacano, Yu.N. Sveshnikov, S.A. Vitusevich, and A.E. Belyaev, Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire . Semiconductors, 40, p. 1060 (2006). https://doi.org/10.1134/S1063782606090132 4. V.P. Kladko, A.F. Kolomys, M.V. Slobodian, V.V. Strelchuk, V.G. Raycheva, A.E. Belyaev, S.S. Bukalov, H. Hardtdegen, V.A. Sydoruk, N. Klein, and S.A. Vitusevich, Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on sapphire substrate . J. Appl. Phys., 105, 063515 (2009). https://doi.org/10.1063/1.3094022 5. V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, H. Hardtdegen, S.A. Vitusevich, Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures . Appl. Phys. Lett. 95, 031907 (2009). https://doi.org/10.1063/1.3184569 6. V.P. Kladko, A.V. Kuchuk, P.M. Lytvyn, O.M. Yefanov, N.V. Safriuk, A.E. Belyaev, Yu.I. Mazur, E.A. DeCuir Jr, M.E. Ware, and G.J. Salamo, Substrate effects on the strain relaxation in GaN/AlN short-period superlattices . Nanoscale Res. Lett. 7, p. 289 (2012). https://doi.org/10.1186/1556-276X-7-289 7. H. Amano, K. Hiramatsu, and I. Akasaki, Heteroepitaxial growth and the effect of strain on the luminescence properties of GaN films on and sapphire substrates . Jpn. J. Appl. Phys., 27, L1384 (1988). https://doi.org/10.1143/JJAP.27.L1384 8. A. Bykhovski, B. Gelmont, and M. Shur, The influence of strain-induced electric field on the charge distribution in GaN-AlN-GaN structure . J. Appl. Phys. 74, p. 6734 (1993). https://doi.org/10.1063/1.355070 9. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Spontaneous polarization and piezoelectric constant of III-V nitrides . Phys. Rev. B, 56, R10024 (1997). https://doi.org/10.1103/PhysRevB.56.R10024 10. P.K. Kandaswamy, F. Guillot, E. Bellet-Amalric, E. Monroy, L. Nevou, M. Tchernycheva, A. Michon, F.H. Julien, E. Baumann, F.R. Giorgetta, D. Hofstetter, T. Remmele, M. Albrecht, S. Birner, and Le Si Dang, GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance . J. Appl. Phys. 104, 093501 (2008). https://doi.org/10.1063/1.3003507 11. P.K. Kandaswamy, C. Bougerol, D. Jalabert, P. Ruterana, and E. Monroy, Strain relaxation in short-period polar GaN/AlN superlattices . J. Appl. Phys. 106, 013526 (2009). https://doi.org/10.1063/1.3168431 12. A. Sarua, Hangfeng Ji, M. Kuball, M.J. Uren, T. Martin, K.J. Nash, K.P. Hilton, and R.S. Balmer, Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias . Appl. Phys. Lett. 88, 103502 (2006). https://doi.org/10.1063/1.2182011 13. O.M. Yefanov, V.P. Kladko, V.F. Machulin, V.B. Molodkin, Dynamical Diffraction of X-rays in Multilayered Structures. Naukova Dumka, Kyiv, 2008. 14. P.F. Fewster, X-Ray Scattering from Semiconductors. London, Imperial College Press, 2000. 15. O.M. Yefanov, V.P. Kladko, The solution of the dispersion equation in an explicit format for a case of two strong waves . Metallofizika i Noveishie Tekhnologii, 28, p. 227-244 (2006). 16. V.B. Molodkin, S.I. Olikhovskii, E.G. Len, E.N. Kislovskii, V.P. Kladko, O.V. Reshetnyk, T.P. Vladimirova, B.V. Sheludchenko, Sensitivity of triple-crystal X-ray diffractometers to microdefects in silicon . phys. status solidi (a), 206(8), p. 1761-1765 (2009). 17. M. Yamaguchi, T. Yagi, T. Sota, T. Deguchi, K. Shimada, and S. Nakamura, Brillouin scattering study of bulk GaN. J. Appl. Phys. 85, p. 8502 (1999). https://doi.org/10.1063/1.370635 18. W. Paszkowicz, X-ray powder diffraction data for indium nitride . Powder Diffract., 14, p. 258 (1999). https://doi.org/10.1017/S0885715600010630 19. H. Heinke, V. Kirchner, S. Einfeldt, A. Hommel, X-ray diffraction analysis of the defect structure in epitaxial GaN . Appl. Phys. Lett. 77, p. 2145 (2000). https://doi.org/10.1063/1.1314877 20. N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin, X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates . Semiconductor Physics, Quantum Electronics & Optoelectronics, 16(3), p. 265-272 (2013). https://doi.org/10.15407/spqeo16.03.265 21. Yu.P. Pershin, V.A. Sevtyukova, Ye.N. Zubarev, A.S. Oberemok, V.P. Melnyk, B.M. Romanyuk, V.G. Popov, P.M. Lytvyn, Investigation of the phase interfaces in periodic multilayer Mo/Si structures, using the method of mass-spectrometry of neutral particles . Metallofizika i Noveishie Tekhnologii, 35(12), p. 1617-1627 (2013). 22. M.A. Moram, M.E. Vickers, X-ray diffraction of III-nitrides . Repts. Progr. Phys. 72, 036502 (2009). https://doi.org/10.1088/0034-4885/72/3/036502 23. V. Srikant, J.S. Speck, D.R. Clarke, Mosaic structure in epitaxial thin films having large lattice mismatch . J. Appl. Phys. 82, p. 4286 (1997). https://doi.org/10.1063/1.366235 24. R.N. Kyutt, M.P. Shcheglov, V.Yu. Davydov, A.S. Usikov, Deformation of layers in superlattices AlGaN/GaN according to XRD analysis . Fizika Tverd. Tela, 46, p. 353 (2004), in Russian. 25. Y. Kotsar, B. Doisneau, E. Bellet-Amalric, A. Das, E. Sarigiannidou, and E. Monroy, Strain relaxation in GaN/ superlattices grown by plasma molecular-beam epitaxy . J. Appl. Phys. 110, 033501 (2011). https://doi.org/10.1063/1.3618680 26. A.V. Kuchuk, V.P. Kladko, T.L. Petrenko, V.P. Bryksa, A.E. Belyaev, Yu.I. Mazur, M.E. Ware, E.A. DeCuir Jr, and G.J. Salamo, Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices . Nanotechnology, 25, 245602 (2014). https://doi.org/10.1088/0957-4484/25/24/245602 |