Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 4. P. 317-324.
https://doi.org/10.15407/spqeo17.04.317

                                                                 

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich1

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
1OАS "Svetlana-Optoelectronics", 78, St.-Petersburg, 194156, Russian Federation

Abstract. Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa1-xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and individual layers, relaxation level and periods, layers' thickness and composition of AlxGa1-xN layers were analyzed using high-resolution X-ray diffractometry. It was ascertained that the buffer layer and SL layers are compressed in all the investigated structures. Thus, it has been shown that deformation of the SL period depends on the well/barrier thickness ratio. Thicknesses of individual layers in SL strongly depend on the deformation state of the whole system. Increasing the deformation level leads to the increase of the barrier layer thickness.

Keywords: superlattice structure, gallium nitride, X-ray diffractometry, deformation characteristics.

Manuscript received 23.06.14; revised version received 14.08.14; accepted for publication 29.10.14; published online 10.11.14.

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