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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 4. P. 325-330.
Carrier transport mechanisms in InSb diffusion p-n junctions 1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine Abstract. The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ≈ 1.6x115 cm-3 at the temperature T = 77 K. Passivation and protection of mesa structures have been carried out using thin films of CdTe. Forward and reverse current-voltage characteristics were investigated within the temperature range 77...156 K. It has been found that the total dark current consists of generation-recombination and tunneling current components, which are dominant at high (T = 120...156 K) and low (T ⟨ 120 K) temperatures, respectively. Experimental results have been explained using the model of a nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction with the rather thick (~1 μm) depeletion region tunneling current flows through the states related to dislocations in the depletion region. The performed estimation of electrical parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based photodiodes at operation temperatures T > 77 K. Keywords:infrared, InSb, linearly-graded junctions, dislocations, tunneling. Manuscript received 16.10.14; revised version received 05.09.14; accepted for publication 00.00.14; published online 00.00.14.
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