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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 17 N 4
DOI: https://doi.org/10.15407/spqeo17.04

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 317-324.
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Carrier transport mechanisms in InSb diffusion p-n junctions
A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 325-330.
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Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface
Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 331-335.
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Nickel-induced enhancement of photo-luminescence in nc-Si-SiOx nanostructures
K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 336-340.
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Photoluminescence of As2S3 doped by Cr and Yb
A.V. Stronski, O.P. Paiuk, V.V. Strelchuk, Iu.M. Nasieka, M. Vlcek
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 341-345.
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Hybrid-integrated version of SBD amplitude detector intended for the 400-600 GHz frequency range
A.V. Zorenko, A.V. Bychok, V.V. Shynkarenko, Ya.Ya. Kudryk, V.S. Slipokurov
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 346-348.
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Influence of absorption saturation on the shape of CdSe absorption edge
M.R. Kulish, M.I. Malysh, G.L. Isaienko, V. Litvinova
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 349-352.
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Structural and optical properties of Zn1-xCoxO thin films prepared by RF reactive sputtering technique
A.I. Savchuk, I.D. Stolyarchuk, I. Stefanuk, B. Cieniek, E. Sheregii
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 353-357.
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Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications
N. P. Klochko, K.S. Klepikova, G. S. Khrypunov, O.V. Pirohov, V.A. Novikov
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 358-367.
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Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy
O.V. Rengevych, G.V. Beketov, Yu.V. Ushenin
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 368-373.
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Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis
Yu.Yu. Bacherikov, S.E. Zelensky, A.G. Zhuk, N.A. Semenenko, O.S. Krylova
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 374-379.
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Peculiarities of phase transformations of SiC crystals and thin films with in-grown original defects
S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 380-383.
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Peculiarities of nonadditive changes in conductivity of nano-PDLC under influence of magnetite and single-wall carbon nanotubes
P. Kopcansky, M. Timko,Z. Mitrova, N. Tomasovicova, L. Tomco, O.V. Kovalchuk, T.M. Kovalchuk, I.V. Oleinikova, A.I. Lad, I.P. Studenyak
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 384-388.
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High-speed optical recording in vitreous chalcogenide thin films
A.A.Kryuchyn, V.V.Petrov, V.M.Rubish, A.S.Lapchuk, S.O.Kostyukevych, P.E.Shepeliavyi
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 389-393.
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Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method
V.N. Sheremet
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 394-397.
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Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 398-402.
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Propagation of privileged waves in longitudinally inhomogeneous medium with linear birefringence and dichroism
M.S. Koev, I.S. Kolomiets, S.N. Savenkov, Ye.A. Oberemok, Yu.A. Skoblya
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 403-407.
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Uncooled р(Pb1–xSnxSe)-n(CdSe) hetero-structure-based spectral range
Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 408-411.
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Statistical structure of the biological tissue scattering of laser field with the complex degree of coherence
P.O. Angelsky
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 412-415.
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Magnetic and magnetoresistive characteristics of neutron-irradiated Si0.97Ge0.03 whiskers
P.G. Litovchenko, N.T. Pavlovska, Yu.V. Pavlovskyy, Yu.O. Ugrin, G. Luka, I.P. Ostrovskyy
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 416-420.
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Studies on the optical fluxes Attenuation Process in optoelectronic systems
T.A. Strelkova
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 421-424.
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Electric conductivity studies of composites (Cu1-xAgx)6PS5I superionic conductors
I.P. Studenyak, R.Yu. Buchuk, A.V. Bendak, O.O. Yamkovy, E. Kazakevicius, T. Šalkus, A. Kežionis, A.F. Orliukas
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.4. P. 425-428.
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Author index 2014 (Volume 17). P.429-439. (PDF)

Publication Ethics and Publication Malpractice Statement. P.440. (PDF)

Information for Contributors.P.441-442. (PDF)

Contents (PDF)