Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 4. P. 349-352.
https://doi.org/10.15407/spqeo17.04.349

                                                                 

Influence of absorption saturation on the shape of CdSe absorption edge
M.R. Kulish1, M.I. Malysh2, G.L. Isaienko3, V.M. Litvinova4

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: n_kulish@yahoo.com
2National Transport University, 1, Suvorov str., 01010 Kyiv, Ukraine
3National Transport University, 42, Kikvidze str., 01103 Kyiv, Ukraine,
4Staten Island Technical High School, 485 Clawson Street, 10306, New York, U.S.A

Abstract. Influence of light polarization on absorption saturation for wurtzite modification CdSe has been investigated. It has been ascertained that the size of blurring the fundamental absorption edge for wurtzite modification CdSe is determined by the non-equilibrium electron filling both the conduction band extremum, when the energy of photons hν is higher than the bandgap energy Eg, and the density-of-state tail caused by the presence of static disorder, when the hν < Eg. The density-of-state tail resulting from the presence of dynamic disorder is not filled with electrons because of continuous changes of the dynamic potential relief value in time. In the high-energy spectral region, change in the absorption coefficient is limited by the stimulated emission processes.

Keywords:cadmium selenide, absorption edge, absorption saturation, bandwidth.

Manuscript received 08.05.14; revised version received 05.09.14; accepted for publication 00.00.14; published online 00.00.14.

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