Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 4. P. 353-357.
https://doi.org/10.15407/spqeo17.04.353


                                                                 

Structural and optical properties of Zn1-xCoxO thin films prepared by RF reactive sputtering technique
A.I. Savchuk1, I.D. Stolyarchuk1, I. Stefanuk2, B. Cieniek2, E. Sheregii2

1Chernivtsi National University, Department of Physics of Semiconductors and Nanostructures,
2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine, e-mail: istolyarchuk@ukr.net
2Centre for Innovation and Transfer of Natural Sciences and Engineering Knowledge,
University of Rzeszow, 16a Rejtana Str., 35959 Rzeszow, Poland

Abstract. We have reported the effect of Co doping on structural and optical properties of ZnO thin films prepared by the RF reactive sputtering technique. The composite targets were formed by mixing and pressing ZnO and CoO powders. The thin films were deposited on silica and glass substrates. The structures of samples have been studied by using X-ray diffraction (XRD) and atomic force microscopy (AFM). With the sensitivity of the XRD instruments, the structural analyses of Co-doped ZnO films reveal formation of predominant (002) reflection corresponding to the hexagonal wurtzite structure without any secondary phase. The AFM study showed that surface morphology of the Zn1-xCoxO films is composed of closely packed nanocrystallites with nanorod shape. The optical properties of the samples were studied using UV-vis absorption and PL spectra. The optical absorption spectra show a red shift of the band edge, which indicates that Co2+ ions substitute Zn2+ ions in ZnO lattice. In the room-temperature photoluminescence spectra, four main peaks were revealed in all the samples, which are attributed to ultraviolet, violet-blue, blue and green emission.

Keywords:ZnCoO, thin films, RF sputtering, X-ray diffraction, optical absorption, photoluminescence.

Manuscript received 06.10.14; revised version received 05.09.14; accepted for publication 00.00.14; published online 00.00.14.

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