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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 4. P. 380-383.
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects 1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Abstract. Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into similar structure-constituting spectra shifted against each other on the energy scale. These spectra are indicative of formation of new nanophases. Taking into account the position of the short-wave edge in the zero-phonon part of the SF-i spectra as well as the position of corresponding excitation spectra and placing them on the well-known linear dependence of the exciton gap (Egx) on the percentage of hexagonally in different polytypic structures, one can obtain a hint to the percentage of hexagonally in the new metastable structures appearing in the 6H (33) matrix or in the growth process. The SF spectra are indicative of the appearance of these metastable structures. Keywords:phase transformation, absorption spectrum, excitation spectrum, low-temperature photoluminescence spectrum, polytypic structure, SiC crystal. Manuscript received 21.10.14; revised version received 05.09.14; accepted for publication 00.00.14; published online 00.00.14.
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