Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 4. P. 394-397.
https://doi.org/10.15407/spqeo17.04.394

                                                                 

Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method
V.N. Sheremet

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine Phone: 38(044) 525-61-82; e-mail: VolodymyrSheremet@gmail.com

Abstract. In this paper, we have considered the four-contact method for measurements of the specific contact resistivity of the ohmic contacts (pc). The presented method for measuring pc has been compared with several other methods. Limits of applying this method have been shown.

Keywords:ohmic contact, four-contact method, specific contact resistivity.

Manuscript received 00.00.14; revised version received 05.09.14; accepted for publication 00.00.14; published online 00.00.14.

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