|
Semiconductor
Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N
4. P. 398-402.
References 1. D.K. Schroder, Semiconductor Material and Devices Characterization, 3rd Edition. John Wiley & Sons, New York, 2006.2. S.M. Sze, K.N. Kwok, Physics of Semiconductor Devices, 3rd Edition. Wiley-Interscience, New York, 2006. https://doi.org/10.1002/0470068329 3. V. Aubry, F. Meyer, Schottky diodes with high series resistance: Limitations of forward I-V methods . J. Appl. Phys. 76(12), p. 7973-7984 (1994). https://doi.org/10.1063/1.357909 4. K. Sarpatwari, Toward understanding the electrical properties of metal/semiconductor Schottky contacts: The effects of barrier inhomogeneities and geometry in bulk and nanoscale structures. PhD Diss. The Pennsylvania State University, 2009. 5. E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts. Clarendon Press, Oxford, 1988. 6. V.G. Bozhkov, A.V. Shmargunov, Influence of the nonlinear dependence of the barrier height on the bias on the measured parameters of contacts with the Schottky barrier . CriMiCo'2011, September 12-16, 2011, p. 246-247, Sevastopol, Crimea, Ukraine. 7. H. Norde, A modified forward I-V plot for Schottky diodes with high series resistance . J. Appl. Phys. 50(7), p. 5052-5053 (1979). https://doi.org/10.1063/1.325607 8. C.D. Lien, F.C.T. So, M.A. Nicolet, An improved forward I-V method for non-ideal Schottky diodes with high series resistance . IEEE Trans. Electron. Devices, ED-31, N10, p. 1502-1503 (1984). https://doi.org/10.1109/T-ED.1984.21739 9. R.M. Cibils, R.H. Buitrago, Forward I-V plot for non-ideal Schottky diodes with high series resistance . J. Appl. Phys. 58, p. 1075-1077 (1985). https://doi.org/10.1063/1.336222 10. S.K. Cheung, N.W. Cheung, Extraction of Schottky diode parameters from forward current-voltage characteristics . Appl. Phys. Lett. 49(2), p. 85-87 (1986). https://doi.org/10.1063/1.97359 11. J.H. Werner, Schottky barrier and p-n junction I/V plots - small signal evaluation . Appl. Phys. A, 47(3), p. 291-300 (1988). https://doi.org/10.1007/BF00615935 12. R.J. Bennett, Interpretation of forward bias behavior of Schottky barriers . IEEE Trans. Electron. Devices, ED-34, N4, p. 935-9371 (1987). https://doi.org/10.1109/T-ED.1987.23020 13. Ya.Ya. Kudryk, Determination of the barrier height in Schottky diodes with shunt effect . Peterbugskii zhurnal elektroniki, N1, p. 95-99 (2005), in Russian. 14. A. Ferhat-Hamida, Z. Ouennoughi, A. Hoffmann, R. Weiss, Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method . Solid-State Electronics, 46, p. 615-619 (2002). https://doi.org/10.1016/S0038-1101(01)00337-9 15. A. Ortiz-Conde, M Yuansheng, J. Thomson et al., Direct extraction of semiconductor device parameters using lateral optimization method . Solid-State Electronics, 43, p. 845-848 (1999). https://doi.org/10.1016/S0038-1101(99)00044-1 16. N. Karaboga, S. Kockanat, H. Dogan, The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony . Appl. Intell. 38, p. 279-288 (2013). https://doi.org/10.1007/s10489-012-0372-x 17. The program for the calculation of the Schottky barrier height [electronic resource], Ya.Ya. Kudryk, V.V. Shinkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk: the site of Laboratory N33, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine; https:. isp.kiev.ua/index.php/uk/component/content/article/908-publications/lab33/lab-33-ustanovky/3944 18. K. Sato, Y. Yasumura, Study of the forward I-V plot for Schottky diodes with high series resistance . J. Appl. Phys. 58, p. 3655-3657 (1985). https://doi.org/10.1063/1.335750 19. O.A. Ageev, A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, P.M. Lytvyn, V.V. Milenin, A.V. Sachenko, AuTiBx-n-6H-SiC Schottky barrier diodes: the features of current flow in rectifying and nonrectifying contacts . Fizika tekhnika poluprovodnikov, 43(7) p. 897-903 (2009), in Russian. 20. T. Teraji, S. Hara, Control of interface states at metal/6H-SiC(0001) interfaces . Phys. Rev. B, 70, p. 035312-(1-19) (2004). 21. R.T. Tung, Recent advances in Schottky barrier concepts . Mater. Sci. Eng. R, 35, p. 1-138 (2001). https://doi.org/10.1016/S0927-796X(01)00037-7 22. Contacts to Semiconductors: Fundamentals and Technology, ed. by L.J. Brillson. 1st Indian Ed. Crest Publishing House, New Delhi, 2005.
|