Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 4. P. 398-402.
https://doi.org/10.15407/spqeo17.04.398

                                                                 

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
Ya.Ya. Kudryk1, V.V. Shynkarenko1, V.S. Slipokurov1, R.I. Bigun2, R.Ya. Kudryk2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: kudryk@isp.kiev.ua
2Ivan Franko National University of Lviv
1, Universytetska str. 79000 Lviv, Ukraine

Abstract. We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au-TiB2-n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the series resistance in calculating the ideality factor and barrier height has been shown with the Cheung method and direct approximation one. It has been ascertained that an inconsistency between real current-voltage characteristics and its model - the temperature dependence of the barrier height, the ideality factor dependence on the voltage - introduces the basic error into the calculated parameters in the diode under study.

Keywords:Schottky barrier, wide-gap semiconductor, ideality factor, current-voltage and capacitance-voltage characteristics.

Manuscript received 00.00.14; revised version received 05.09.14; accepted for publication 00.00.14; published online 00.00.14.

Full Text (PDF)

Back to Volume 17 N4