Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 4. P. 408-411.
https://doi.org/10.15407/spqeo17.04.408

                                                                 

Uncooled p(Pb1-xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya

I.I. Mechnikov Odessa National University,
2, Dvoryanskaya str., 65082 Odessa, Ukraine Phone/fax: +38(048) 723-34-61, e-mail: ndl_lepikh@onu.edu.ua

Abstract. The possibility to create uncooled photodetector (PhD) in the region close to l=10μm being based on p(Pb1-xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled thin-film PhD based on p(Pb1-xSnxSe)-n(CdSe) heterojunction in which broad-band CdSe layer is located on the illuminated surface and play the role of the optical filter with respect to the lower layer of ternary compound. The PhD spectral characteristics at room temperature have been researched, which confirms the photoactivity of both heterojunction layers. The mechanism of current flow in the PhD structure based on the above heterojunction and the mechanism of the PhD samples sensitivity at room temperature in the far infrared spectrum, the determining factor of which is the amount of wide-gap semiconductors where space charge-limited current appears, have been investigated. The uncooled PhD detectability typical for polycrystalline structures 1...107 cm Hz1/2/W has been discovered.

Keywords:infrared photodetector, heterostructures, heterojunction, energy band diagram, detectability.

Manuscript received 00.00.14; revised version received 05.09.14; accepted for publication 00.00.14; published online 00.00.14.

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