Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 4. P. 391-395.
DOI: https://doi.org/10.15407/spqeo18.04.391

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
A.E. Belyaev1, N.A. Boltovets2, A.B. Bobyl3, V.P. Kladko1, R.V. Konakova1, Ya.Ya. Kudryk1, M.U. Nasyrov1, A.V. Sachenko1, V.S. Slipokurov1, A.S. Slepova2, N.V. Safryuk1, A.I. Gudymenko1, V.V. Shynkarenko1

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 41, prospect Nauky, 03680 Kyiv, Ukraine, e-mail: konakova@isp.kiev.ua
2State Enterprise Research Institute “Orion”, 03057 Kyiv, Ukraine 3A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 197101, St. Petersburg, Russian Federation

Abstract. Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n+-InP and Au–Ti–Ge–Pd-n+-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n+-n-n++-n+++-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n+-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n+-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~109 cm–2.

Keywords: ohmic contacts, specific contact resistance, InP, current transport mechanism.

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