Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 4. P. 448-451.
DOI: https://doi.org/10.15407/spqeo18.04.448

External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals
S.I. Vlaskina1,2, G.N. Mishinova3, V.I. Vlaskin4, V.E. Rodionov2, G.S. Svechnikov2

1Yeoju Institute of Technology (Yeoju University), 338 Sejong-ro, Yeoju-eup, Yeoju-gun, Gyeonggi-do, 469-705 Korea
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: businkaa@mail.ru
3Taras Shevchenko Kyiv National University, 64, Volodymyrs’ka str., 01033 Kyiv, Ukraine
4Sensartech, 2540 Lobelia Dr., Oxnard, 93036 California, USA

Abstract. Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with availability of packing defects that lead to one-dimensional disordering (along the c-axis). They are a most expressed in doped crystals with original growth defects. DL luminescence appears in pure crystals at plastic deformation and in doped crystals at a hydrostatic pressure. It enhances at the high temperature annealing, too.

Keywords: silicon carbide, phase transition, 3C-6H polytype, luminescence.

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