Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (4), P. 385-395 (2017).
DOI: https://doi.org/10.15407/spqeo20.04.385

Preparation and study of porous Si surfaces obtained using the electrochemical method
V.G. Lytovchenko1*, T.I. Gorbanyuk1, V.P. Kladko1, A.V. Sarikov1, N.V. Safriuk1, L.L. Fedorenko1, S. Ašmontas2, J. Gradauskas2, E. Širmulis2*, O. Žalys2

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 45, prospect Nauky, 03680 Kyiv, Ukraine
2Center for Physical Sciences and Technology, Saulėtekio av., 3, LT-10257, Vilnius, Lithuania
*Corresponding authors e-mail: lvg@isp.kiev.ua1; sirmulis@gmail.com2

Abstract. Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si based MIS structures as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.

Keywords: porous Si, electrochemical etching, gas sensing, MIS structure, photo¬lu¬mi¬nes¬cence, X-ray diffraction, kinetic modeling.

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