Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (4), P. 465-469 (2017).

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
Yu.Yu. Bacherikov1, R.V. Konakova1, O.B. Okhrimenko1*, N.I. Berezovska2, L.M. Kapitanchuk3, A.M. Svetlichnyi4

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine *E-mail:
2Taras Shevchenko National University of Kyiv, Faculty of Physics, Ukraine
3Paton Institute of Electric Welding, NAS of Ukraine, Kyiv, Ukraine
4Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering, Southern Federal University, Taganrog, Russia

Abstract. The comparative analysis of optical characteristics inherent to Er2O3/SiC and Er2O3/por-SiC/SiC structures has been performed. It has been shown that, regardless the substrate on which the Er2O3 film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide film composition, with the composition of the Er2O3 film approaching to the stoichiometric one. At the same time, introduction of an additional porous SiC layer leads to a blurring of the oxide film/substrate interface and broadening the photoluminescence band measured in this structure.

Keywords: thin erbium oxide films, rapid thermal annealing, SiC substrates, interface, porous layer.

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