Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (4), P. 360-364 (2018).
DOI: https://doi.org/10.15407/spqeo21.04.360
Thin dysprosium oxide films formed by rapid thermal annealing
on porous SiC substrate
Yu.Yu. Bacherikov1, R.V. Konakova1, O.B. Okhrimenko1, * , N.I. Berezovska2, O.S. Lytvyn3, L.M. Kapitanchuk4, A.M. Svetlichnyi5
2Taras Shevchenko Kyiv National University, Physics Department, Kyiv, Ukraine
3Borys Grinchenko Kyiv University Kyiv, Ukraine
4Paton Institute of Electric Welding, NAS of Ukraine, Kyiv, Ukraine
5Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering, Southern Federal University,
Taganrog, Russia
Abstract. In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of film-substrate interface and increasing the optical transmission of Dy 2 O 3 /por-SiC/SiC structure.
Keywords: thin dysprosium oxide films, rapid thermal annealing, SiC substrates, interface, porous layer.
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.