Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (4), P. 360-364 (2018).

Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate
Yu.Yu. Bacherikov1, R.V. Konakova1, O.B. Okhrimenko1, * , N.I. Berezovska2, O.S. Lytvyn3, L.M. Kapitanchuk4, A.M. Svetlichnyi5

1*V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine E-mail:
2Taras Shevchenko Kyiv National University, Physics Department, Kyiv, Ukraine
3Borys Grinchenko Kyiv University Kyiv, Ukraine
4Paton Institute of Electric Welding, NAS of Ukraine, Kyiv, Ukraine
5Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering, Southern Federal University, Taganrog, Russia

Abstract. In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of film-substrate interface and increasing the optical transmission of Dy 2 O 3 /por-SiC/SiC structure.

Keywords: thin dysprosium oxide films, rapid thermal annealing, SiC substrates, interface, porous layer.

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