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Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N4 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 21 N 4
https://doi.org/10.15407/spqeo21.04

Semiconductor Physics

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
G. I. Syngaivska, V. V. Koroteev, V. A. Kochelap
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 325-335 (2018).
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Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation
A. A. Konchits, B. D. Shanina, I. B. Yanchuk, S. V. Krasnovyd
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 336-344 (2018).
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Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
D. I. Bletskan, V. V. Frolova
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 345-359 (2018).
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Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 360-364 (2018).
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Synergetics of the instability and randomness in the formation of gradient modified semiconductor structures
N. V. Yurkovych, M. I. Mar'yan, V. Seben
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 365-373 (2018).
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S1/f noise and carrier transport mechanisms in InSb p + -n junctions
V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 374-379 (2018).
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Hetero- and low-dimensional structures

2D semiconductor structures as a basis for new high-tech devices
D.V. Korbutyak, V.G. Lytovchenko, M.V. Strikha
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 380-386 (2018).
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Electrical and dielectrical properties of composites based on (Ag1–xCux)7GeS5I mixed crystals
V.Yu. Izai, V.I. Studenyak, A.I. Pogodin, I.P. Studenyak, M. Rajnak, J. Kurimsky, M. Timko, P. Kopcansky
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 387-391 (2018).
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Clusters of nickel atoms and controlling their state in silicon lattice
M.K. Bakhadyrkhanov, K.A. Ismailov, B.K. Ismaylov, Z.M. Saparniyazova
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 392-396 (2018).
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Influence of Li-TCNQ impurities on dielectric properties of planar-oriented nematic liquid crystal
V.E. Vovk, O.V. Kovalchuk, T.M. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 397-401 (2018).
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Domain structure regularization in monocrystalline barium hexaferrite
A.L. Nikytenko, V.I. Kostenko, V.I. Grygoruk, V.F. Romaniuk
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 402-406 (2018).
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Influence of nanoparticles of Cu7GeS5 superionic conductor on dielectric properties of planar-oriented nematic liquid crystal 6CB
O.V. Kovalchuk, M.M. Luchynets, I.P. Studenyak, M. Timko, P. Kopcansky, T.M. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 407-411 (2018).
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Optics

Ellipsometry of hybrid noble metal-dielectric nanostructures
A.L. Yampolskiy, O.V. Makarenko, L.V. Poperenko, V.O. Lysiuk
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 412-416 (2018).
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Optical properties of ternary alloys MgZnO in infrared spectrum
E.F. Venger, I.V. Venger, N.O. Korsunska, L.Yu. Melnichuk, O.V. Melnichuk, L.Yu. Khomenkova
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 417-423 (2018).
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Optoelectronics and optoelectronic devices

Spectral control of power diode lasers with enhanced output by external cavity based on volume holofraphic grating
S.M. Bashchenko, L.S. Marchenko, A.M. Negriyko, T.N. Smirnova, I.V. Matsnev
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 424-428 (2018).
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Linear and nonlinear solid-state optics

Reduction of speckle noise in laser energy distribution on the target by means of modified fourier hologram and incoherent averaging technique.
A. Derzhypolskyi, O. Gnatovskyi, L. Derzhypolska
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 429-433 (2018).
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Lectures, Presentations (For subsribers only)

Photovoltaics today
V.D. Kostylyov
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 434 (2018).

Hybrid organic-inorganic hetero-junctions: Principles of functioning and application in solar cells
O.P. Dimitriev
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 435 (2018).

History

V.A. Tyagai, 80-year anniversary
Colleagues and disciples of Valeriy Arnoldovich Tyagai (SPQEO Editorial Board)
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 436-437 (2018).

2018 Authors

Author Index
Semiconductor physics, quantum electronics and optoelectronics, 21 (4), P. 438-442 (2018).
Full text (PDF)

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This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

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