Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields G. I. Syngaivska, V. V. Koroteev, V. A. Kochelap
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 325-335 (2018). | Full text (PDF) | Abstract (in Ukrainian)Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation A. A. Konchits, B. D. Shanina, I. B. Yanchuk, S. V. Krasnovyd
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 336-344 (2018). | Full text (PDF) | Abstract (in Ukrainian)Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 D. I. Bletskan, V. V. Frolova
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 345-359 (2018). | Full text (PDF) | Abstract (in Ukrainian)Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates Yu.Yu. Bacherikov, R.V. Konakova,
O.B. Okhrimenko, N.I. Berezovska,
O.S. Lytvyn, L.M. Kapitanchuk,
A.M. Svetlichnyi
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 360-364 (2018). | Full text (PDF) | Abstract (in Ukrainian)Synergetics of the instability and randomness in the formation of gradient modified semiconductor structures N. V. Yurkovych, M. I. Mar'yan, V. Seben
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 365-373 (2018). | Full text (PDF) | Abstract (in Ukrainian)S1/f noise and carrier transport mechanisms in InSb p + -n junctions V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 374-379 (2018). | Full text (PDF) | Abstract (in Ukrainian)
Hetero- and low-dimensional structures
2D semiconductor structures as a basis for new high-tech devices D.V. Korbutyak, V.G. Lytovchenko,
M.V. Strikha
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 380-386 (2018). | Full text (PDF) | Abstract (in Ukrainian)Electrical and dielectrical properties of composites based
on (Ag1–xCux)7GeS5I mixed crystals V.Yu. Izai, V.I. Studenyak, A.I. Pogodin, I.P. Studenyak, M. Rajnak, J. Kurimsky, M. Timko, P. Kopcansky
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 387-391 (2018). | Full text (PDF) | Abstract (in Ukrainian)Clusters of nickel atoms and controlling their state in silicon lattice M.K. Bakhadyrkhanov, K.A. Ismailov, B.K. Ismaylov, Z.M. Saparniyazova
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 392-396 (2018). | Full text (PDF) | Abstract (in Ukrainian)Influence of Li-TCNQ impurities on dielectric properties of planar-oriented nematic liquid crystal V.E. Vovk, O.V. Kovalchuk, T.M. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 397-401 (2018). | Full text (PDF) | Abstract (in Ukrainian)Domain structure regularization in monocrystalline barium hexaferrite A.L. Nikytenko, V.I. Kostenko, V.I. Grygoruk, V.F. Romaniuk
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 402-406 (2018). | Full text (PDF) | Abstract (in Ukrainian)Influence of nanoparticles of Cu7GeS5 superionic conductor on dielectric properties of planar-oriented nematic liquid crystal 6CB O.V. Kovalchuk, M.M. Luchynets,
I.P. Studenyak, M. Timko, P. Kopcansky, T.M. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 407-411 (2018). | Full text (PDF) | Abstract (in Ukrainian)
Optics
Ellipsometry of hybrid noble metal-dielectric nanostructures A.L. Yampolskiy, O.V. Makarenko,
L.V. Poperenko, V.O. Lysiuk
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 412-416 (2018). | Full text (PDF) | Abstract (in Ukrainian)Optical properties of ternary alloys MgZnO in infrared spectrum E.F. Venger, I.V. Venger,
N.O. Korsunska, L.Yu. Melnichuk,
O.V. Melnichuk, L.Yu. Khomenkova
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 417-423 (2018). | Full text (PDF) | Abstract (in Ukrainian)
Optoelectronics and optoelectronic devices
Spectral control of power diode lasers with enhanced output by external cavity based on volume holofraphic grating S.M. Bashchenko, L.S. Marchenko, A.M. Negriyko, T.N. Smirnova, I.V. Matsnev
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 424-428 (2018). | Full text (PDF) | Abstract (in Ukrainian)
Linear and nonlinear solid-state optics
Reduction of speckle noise in laser energy distribution on the target by means of modified fourier hologram and incoherent averaging technique. A. Derzhypolskyi, O. Gnatovskyi, L. Derzhypolska
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 429-433 (2018). | Full text (PDF) | Abstract (in Ukrainian)
Lectures, Presentations (For subsribers only)
Photovoltaics today V.D. Kostylyov
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 434 (2018). Full text (PDF)Hybrid organic-inorganic hetero-junctions: Principles of functioning and application in solar cells O.P. Dimitriev
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 435 (2018). Full text (PDF)
History
V.A. Tyagai, 80-year anniversary Colleagues and disciples of Valeriy Arnoldovich Tyagai (SPQEO Editorial Board)
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 436-437 (2018). Full text (PDF)
2018 Authors
Author Index
Semiconductor physics, quantum electronics and optoelectronics, 21 (4),
P. 438-442 (2018). Full text (PDF)