Semiconductor
Physics, Quantum Electronics and Optoelectronics, 21 (4), P. 374-379 (2018). References
1. Rogalski A. Infrared Detectors. Gordon and Breach Science Publishers, 2000.
2. Tetyorkin V., Sukach A. and Tkachuk A. InAs infrared photodiodes. In: Advances in Photodiode. Ed. Gian-Franco Dalla Betta. INTECH, 2011. P. 427–446.
3. Sukach A.V., Tetyorkin V.V., Krolevec N.M. Tunneling current via dislocations in InAs and InSb infrared photodiodes. SPQEO. 2011. 14, No 4. P. 416–420.
4. Sukach A.V., Tetyorkin V.V., Tkachuk A.I. Carrier transport mechanisms in reverse biased InSb p-n functions. SPQEO. 2015. 18, No 3. P. 267–271.
5. Sukach A.V., Tetyorkin V.V., Tkachuk A.I. Electrical properties of InSb p-n junctions prepared by diffusion methods. SPQEO. 2016. 19, No 3. P. 295–298.
6. Klaassen F.M., Blok J. and De Hoog F.J. Generation-recombination noise in p-type InSb. Physica. 1961. 27, No 2. P. 185–196.
7. Pagel B.R., & Petritz R.L. Noise in InSb photodiodes. J. Appl. Phys. 1961. 32, No 10. P. 1901–1904.
8. Epstein M. Current noise in evaporated films of InSb and InAs. J. Appl. Phys. 1965. 36, No 8. P. 2590–2591.
9. Fleming W.J. & Rowe J.E. Emission of microwave noise radiation from InSb. J. Appl. Phys. 1971. 42, No 1. P. 435–444.
10. Van Welzenis R.G., & Lodder J.J. Generation-recombination noise and the microwave emission from InSb. J. Appl. Phys. 1973. 44, No 6. P. 2696–2707.
11. Lukyanchikova N.B., Solganik B.D. and Kosogov O.V. Effect of illumination on noise and some other characteristics of p-n junctions in InSb. Solid-State Electron. 1973. 16, No 12. P. 1473–1480.
12. Hall D.N.B., Alkens R.S., Joyce R., McCurnin T.W. Johnson noise limited operation of photovoltaic InSb detectors. Appl. Opt. 1975. 14, No 2. P. 450–453.
13. Vande Voorde P., Iddings C.K., Love W.F., and Halford D. Structure in the flicker-noise power spectrum of n-InSb. Phys. Rev. B. 1979. 19, No 8. P. 4121–4124.
14. Vande Voorde P. and Love W.F. Magnetic effects on 1/f noise in n-InSb. Phys. Rev. B. 1981. 24, No 8. P. 4781–4786.
15. Kogan Sh. 1/f noise and random telegraph noise. In: Electronic Noise and Fluctuations in Solids. Cambridge University Press, 1996. P. 203–286.
16. Brown E. Non-equilibrium noise of InSb hot electron bolometers. J. Appl. Phys. 1984. 55, No 1. P. 213–217.
17. Astahov A.P., Dudkin V.F., Kerner B.S. et al., Mechanisms of burst noise p-n junctions. Microelectronics. 1989. 18, No 5. P. 455–463 (in Russian).
18. Alekperov S.A., Aliyev F.L. Temperature dependence of 1/f noise in p-InSb. Fiz. Tekhn. Poluprovod. 1990. 24, No 5. P. 921–923 (in Russian).
19. Aleksandrov S.E., Gavrilov G.A., Sotnikov G.Yu. Influence of low-frequency noise on threshold sensitivity of MWIR photodiode photodetectors in wide frequency range. Techn. Phys. Lett. 2014. 40, No 16. P. 58–64.
20. Riben A.R. and Feucht D.L. Int. J. Electron. 1966. 20, 583. https://doi.org/10.1016/0038-1101(66)90129-8.
21. Nemirovsky Y., Unikovsky A. Tunneling and 1/f noise currents in HgCdTe photodiodes. J. Vac. Sci. Technol. B. 1992. 10, No 4. P. 1602–1610.
22. Nemirovsky Y., Fastow R., Meyassed M., and Unikovsky A. Trapping effects in HgCdTe. J. Vac. Sci. Technol. B. 1991. 9, No 3. P. 1829–1839.
23. Kleinpenning T.G.M. 1/f noise in p-n junction diodes. J. Vac. Sci. Technol. A. 1985. 3, No 1. P. 176–182.
24. Hooge F.N., Kleinpenning T.G.M., Vandamme L.K.J. Experimental studies on 1/f noise. Reports on Progress in Physics. 1981. 44, No 3. P. 479–532.
25. van der Ziel A., Fang P., He L., Wu X.L., van Rheenen A.D., and Handel P.H. 1/f noise characterisation of n+-p and p-i-n Hg1-xCdxTe detectors. J. Vac. Sci. Technol. A. 1989. 7, No 2. P. 550–554.
26. Lukyanchikova N.B. Noise Research in Semiconductor Physics. Ed. B. Jones. CRC Press, 1997.
|