Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (4), P. 374-379 (2018).
1/f noise and carrier transport mechanisms in InSb p + -n junctions
Abstract. The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise. Keywords:InSb, infrared spectrum, p-n junction, trap-assisted tunneling, 1/f noise. This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
|