Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (4), P. 374-379 (2018).

1/f noise and carrier transport mechanisms in InSb p + -n junctions
V.V. Tetyorkin1*, A.V. Sukach1, A.I. Tkachuk2, S.P. Trotsenko1

1*V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03680 Kyiv, Ukraine E-mail:
2V. Vynnychenko Central Ukrainian State Pedagogical University, 25006 Kropyvnytskyi, Ukraine

Abstract. The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise.

Keywords:InSb, infrared spectrum, p-n junction, trap-assisted tunneling, 1/f noise.

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