Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (4), P. 381-386 (2019).

Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data
M.D. Borcha1*, M.S. Solodkyi1, S.V. Balovsyak1, V.M. Tkach2, I.I. Hutsuliak1, A.R. Kuzmin1, О.О. Tkach1, V.P. Kladko3, O.Yo. Gudymenko3, О.І. Liubchenko3, Z. Świątek4

1Yu. Fedkovych Chernivtsi National University, 2, Kotsyubinskiy str., 58012 Chernivtsi, Ukraine
2V. Bakul Institute of Superhard Materials, NAS of Ukraine, 2, Avtozavodska str., 03142 Kyiv, Ukraine
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine
4Institute of Metallurgy and Materials Science, Polish Academy of Science, Krakow, Poland *Corresponding author e-mail:

Abstract. The structural homogeneity and degree of perfection inherent to mosaic Ge:Sb samples were investigated. The modified methods for analyzing diffraction images of backscattered electrons (Kikuchi patterns) were used to reduce the influence of instrumental factors. The root-mean-square deformations in the local regions of separate grains and at the boundaries between them were determined using the value of the spatial frequency of the energy spectrum of two-dimensional Fourier transform of Kikuchi patterns. It is shown that the maximum values of deformations (3.510–3) are typical for local regions, which are usually located at the boundaries between subgrains. X-ray studies confirm obtained values of root-mean-square deformations.

Keywords: high resolution X-ray diffractometry, electron backscatter diffraction, Kikuchi method, reciprocal space maps, Fourier transform.

Full Text (PDF)

Back to Volume 22 N4

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.