Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (4), P. 339-345 (2020).

Features of current transport in Al–Al2O3–p-CdTe–Mo structure
A.K. Uteniyazov1*, A.Yu. Leyderman2, R.A. Ayukhanov2, E.S. Esenbaeva3, M.V. Gafurova4

1Karakalpak State University, Nukus, Uzbekistan
2Physical-Technical Institute SPA “Physics–Sun” named after S.A. Azimov, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan 3Nukus branch of the Tashkent University of Information Technology, Nukus, Uzbekistan
4Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

Abstract. The results of studies of the current-voltage characteristics of the Al–Al2O3–p-CdTe–Mo structure in the forward direction of the current in the dark and under light illumination have been presented. These characteristics have four sections of the power-law dependence of the current on the voltage in the form J ~ Vα. It has been shown that the Al–Al2O3–p-CdTe–Mo structure can be considered as a n+-p diode structure with a long base, in which the current transport processes are described by the drift model of ohmic relaxation under conditions of non-equilibrium carriers recombination occurring through a pair two-level recombination complex.

Keywords: sinjection, pair two-level recombination complex, rapid current increase.

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