Features of current transport in Al–Al2O3–p-CdTe–Mo structure
A.K. Uteniyazov, A.Yu. Leyderman, R.A. Ayukhanov, E.S. Esenbaeva, M.V. Gafurova
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 339-345 (2020).
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Characterization of nano-bio silicon carbide S.I. Vlaskina, G.N. Mishinova, I.L. Shaginyan, P.S. Smertenko, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 346-354 (2020).
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Elastic properties of CdTe1–xSex(x = 1/16) solid solution: First principles study H.A. Ilchuk, D.V. Korbutyak, A.I. Kashuba, B. Andriyevsky, I.M. Kupchak, R.Yu. Petrus, I.V. Semkiv
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 355-360 (2020).
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Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon M.K. Bakhadyrkhanov, B.K. Ismaylov, S.A. Tachilin, K.A. Ismailov, N.F. Zikrillaev
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 361-365 (2020).
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Model phonon spectra of Cu7SiS5I and Ag7SiS5I crystals I.I. Nebola, A.F. Katanytsia, A.Ya. Shteyfan, I.M. Shkyrta, I.P. Studenyak, M. Timko, P. Kopčanský
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 366-371 (2020).
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Features of dielectric properties of medical thermal indicators based on dispersions
of cholesteric liquid crystals in the polymer matrix O.V. Kovalchuk, V.Yo. Kotovskyi, V.E. Ovcharek, I.V. Oleinikova, T.M. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 372-378 (2020).
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Physics of microelectronic devices
Manifestation of the channeling effect
when manufacturing JFET transistors
V.G. Verbitskiy, S.V. Voevodin, V.V. Fedulov G.V. Kalistyi, D.O. Verbitskiy
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 379-384 (2020).
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Fidelity of noisy multiple-control reversible gates V.G. Deibuk, I.M. Yuriychuk, I. Lemberski
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 385-392 (2020).
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Optics
Studying the polymerization efficiency of photosensitive compositions by using the surface plasmon resonance method V.M. Granchak, V.G. Sysyuk, H.V. Dorozinska, V.P. Maslov, G.V. Dorozinsky, O.O. Kudryavtsev, N.V. Kachur
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 393-399 (2020).
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Determination of the parameters of coherent magneto-optical layers on a finite absorbing substrate from thermal radiation spectra V.O. Morozhenko, V.P. Maslov, I.V. Bariakhtar, N.V. Kachur
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 400-407 (2020).
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Optoelectronics and optoelectronic devices
Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission S. Hussain, Md.M. Rahman, Md.T. Prodhan
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 408-414 (2020).
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Electro-optical characteristics of an innovative LED luminaire with an LED matrix cooling system based on heat pipes D.V. Pekur, V.M. Sorokin, Yu.E. Nikolaenko, V.P. Kostylyov, V.S. Solntsev, V.V. Ponomarenko
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 415-423 (2020).
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Structural optimization of optoelectronic components in millimeter-wave radio-transmitting modules Y.A. Kremenetskaya, S.E. Markov, Yu.V. Melnyk
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 424-430 (2020).
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Sensors
Localized surface plasmon resonance nanochips with molecularly imprinted
polymer coating for explosives sensing V.I. Chegel, A.M. Lopatynskyi, V.K. Lytvyn, P.V. Demydov, J.P. Martinez-Pastor, R. Abargues, E.A. Gadea, S.A. Piletsky
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 431-436 (2020).
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Modeling of thermometric characteristics of thermodiode sensors by using the dimensionless sensitivity P.S. Smertenko
Semiconductor physics, quantum electronics and optoelectronics, 23 (4),
P. 437-441 (2020).
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