Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (4), P. 361-365 (2020).

Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon
M.K. Bakhadyrkhanov1, B.K. Ismaylov2, S.A. Tachilin1, K.A. Ismailov2, N.F. Zikrillaev1

1Tashkent State Technical University
100095, Uzbekistan, Tashkent, Universitetskaya str. 2,
2Karakalpak State University named after Berdakh, Uzbekistan
230112, KAR, Nukus, Ch. Abdirov str., 1

Abstract. The results of this study show that creation of clusters from impurity nickel atoms almost completely suppresses generation of thermal donors within the temperature range 450 to 1200 °C. The composition of these clusters was determined using the technique of energy dispersive X-ray spectroscopy, which revealed that the typical cluster consists of silicon atoms (65%), nickel atoms (15%) and oxygen atoms (19%). Based on the experimental results, the authors have suggested that the nickel atoms intensively perform the role of getter for oxygen atoms in the course of clusterization. It was shown that the additional doping of silicon with nickel at T = 1100…1200 °C enables to ensure a sufficiently high thermal stability of its electrical parameters within a wide temperature range.

Keywords: clusters of nickel atoms, lifetime, diffusion, thermal donors, thermal stability, electrical parameters, gettering.

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