¹Taras Shevchenko National University of Kyiv, Faculty of Radiophysics, Electronics and Computer Systems,
4g, prospect Akademika Hlushkova, 03022 Kyiv, Ukraine
²V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine
E-mail: maksym.strikha@gmail.com

Abstract. In this paper, the novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple and cost-effective manufacturing process based on the standard microelectronics-grade silicon wafers with no ultra-high vacuum required and no complicated chemical deposition processes or toxic chemicals involved. It integrates within a single technological step both the SiC growth and nanostructuring the surface in the form of nanosized protrusions, which is extremely beneficial for cathode applications. A simple mathematical model predicts field emission current densities and turn-on electric fields, which would allow practical device applications. According to our estimations, emission currents in the milli-Amp range can be harvested from one square centimeter of the cathode surface with electric field close to 107 V/m. So, the nanostructured SiC can be the promising material for the cold electron emitters.

Keywords:cold electron emitters, nanostructured SiC layers, current density.

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