Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (4), P. 362-371 (2021).

Phase transition in vanadium oxide films formed by multistep deposition
V.P. Kladko, V.P. Melnik, О.I. Liubchenko, B.M. Romanyuk, О.Yo. Gudymenko, Т.M. Sabov, О.V. Dubikovskyi, Z.V. Maksimenko, О.V. Kosulya, O.A. Kulbachynskyi, P.M. Lytvyn, О.O. Efremov

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
41, prosp. Nauky, 03680 Kyiv, Ukraine

Abstract. VOx films deposited using the multistep method have been investigated. These films were prepared by repeating the two-stage method of low-temperature deposition and low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.

Keywords:vanadium oxide films, phase transition, low-temperature annealing, theoretical modeling.

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