Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (4), P. 399-406 (2021).
DOI: https://doi.org/10.15407/spqeo24.04.399


Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes
A.M. Goriachko 1, M.V. Strikha1,2

1Siddaganga Institute of Technology, Tumakuru, India
2BMS College of Engineering, Bengaluru, India
E-mail: shashikala.bn@gmail.com
E-mail: maksym.strikha@gmail.com

Abstract. This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

Keywords:field plate, GaN, leakage current, Schottky diode, TiO2.

Full Text (PDF)


Back to Volume 24 N4

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.