Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (4), P. 419-424 (2021).

Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode
V.L. Borblik

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine; e-mail:

Abstract. In this article, process of current flow in a nanowire radial p-i-n diode has been considered in detail. It has been shown that cylindrical geometry of the structure gives rise to specific asymmetry of the concentration distribution for current carriers injected to the i-layer, which is opposite to asymmetry that is due to inequality of carriers’ mobilities. This specific asymmetry rises with bringing the i-layer nearer to the nanowire center. Together with that, decrease of the current density in a “long” p-i-n diode and its increase in a “short” p-i-n diode take place (at given forward voltage). And variation of radial thickness of the i-layer demonstrates maximums in the current density at the thickness close to the bipolar diffusion length.

Keywords:core-shell nanowire, radial p-i-n diode, concentration distribution, current-voltage characteristic.

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