Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (4), P. 398-401 (2022).
DOI: https://doi.org/10.15407/spqeo25.04.398

Impact of post-annealing temperature on optical and surface properties of tellurium doped ZnO nanocrystalline films

A.U. Sonawan1, B.K. Sonawane2

1Department of Electronics, DNCVPS Shirish Madhukarrao Chaudhari College, Jalgaon, Maharashtra, India
2Department of Electronics, J.D.M.V.P.Co-Op. Samaj’s Arts, Commerce and Science College, Jalgaon, Maharashtra, India

Abstract. Investigated in this work is the effect of post-annealing temperature on ZnO nanocrystalline thin films doped with 5 at.% tellurium. The spin coating method was used to deposit films on the microscopic glass substrates. XRD, AFM, and UV-spectro-photometry were used to characterize the films structure, surface roughness and optical properties. The XRD spectra showed that the nanocrystalline films are of monocrystalline nature. AFM has confirmed the nanocrystalline character of tellurium-doped ZnO. The transmission of exposed films has been decreased with the increase of annealing temperature. The average transmission of all the films has been revealed to be higher than 80%. The optical band gap varies slightly with post-annealing temperature.

Keywords: sol-gel, nanocrystalline films, annealing temperature, AFM.

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