Semiconductor Physics, Quantum Electronics & Optoelectronics, 27 (4), P. 404-411 (2024).
X-ray diffraction and Raman spectroscopy studies of Ga-Ge-Te alloys
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine Abstract.
The structure and vibrational properties of glassy Ge19Te81 and Ga7.9Ge11.5Te80.6 alloys were studied using X-ray diffraction and Raman spectroscopy. The amorphous nature of the obtained alloys was confirmed by the experimental X-ray diffraction patterns. The latter were used for calculating radial distribution functions. Such calculations gave the positions of the nearest-neighbour peak r1 – 2.65 Å and second nearest-neighbour peak r2 – 4.31 and 4.44 Å. The obtained r1 values are in good agreement with the known from literature Ge-Te and Ga-Te bond lengths. Similar r1 values were also observed for Ga-Ge-Te glasses of different compositions. The r2/r1 values of 1.63 and 1.68 are close to the typical value for a regular tetrahedron structure. The observed bands in the Raman spectra of the studied Ga-Ge-Te samples show that such glasses contain different nanophases. The Raman spectra may be interpreted in terms of vibrational modes of Ga-Te and Ge-Te binary glasses and films.
Keywords: X-ray diffraction, Raman spectroscopy, glassy Ga-Ge-Te alloys. This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
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