Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (4), P. 55-60 (1999)
https://doi.org/10.15407/spqeo2.04.055

PACS 72.20.J, 78.55, 78.60

Evaluation of the efficiency of interband radiative recombination in high quality Si

A.V. Sachenko, Yu.V. Kryuchenko

Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, ¹4.-P.55-60.-Engl. Il.: 6. Ref.: 17.

Abstract. It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wavelength of exciting monochromatic light, surface recombination rate and thickness of silicon plate are discussed.

Keywords: interband radiative recombination in silicon, high excitation, quantum efficiency.

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