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Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N4 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 2 N 4
https://doi.org/10.15407/spqeo2.04

Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs/GaAs heterostructures
Z.Ya. Zhuchenko, G.G. Tarasov, S.R.Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 005-009 (1999).

Investigation of the undersurface damaged layers in silicon wafers
R.Yu. Holiney, L.A. Matveeva, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 010-012 (1999).

Micro-Raman study of CNx composites subjected to high pressure treatment
N.I. Klyui, M.Ya. Valakh, V.G. Visotski, J. Pascual, N. Mestres, N.V. Novikov, I.A. Petrusha, M.A. Voronkin, N.I. Zaika
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 013-018 (1999).

Saddle point excitonic resonances in BiI3 layered single crystals
O.O. Kudryavtsev, M.P. Lisitsa, F.V. Motsnyi, S.V. Virko
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 019-022 (1999).

Model of optical transitions in A2B6 wurtzite type quantum dots
V.P. Kunets
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 023-027 (1999).

Anisotropy of ultrasonic waves propagation velocities in CdHgTe/CdTe
I. O. Lysiuk, V. F. Machulin, Ya. M. Olikh
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 028-030 (1999).

Characterization of Hg1-xMnxTe single crystals and Hg1-xMnxTe-based photodiodes
L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 031-036 (1999).

Quaternary semimagnetic Hg1-x-yCdxMnySe crystals for optoelectronic application
Yu.I. Mazur, G.G. Tarasov, E.V. Kuz'menko, A.E. Belyaev, W. Hoerstel, W. Kraak, W.T. Masselink
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 037-045 (1999).

Conductivity of a two-phase composite: An approach based on bounds
A.V. Goncharenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 046-050 (1999).

Photogeneration of charge carriers in photosensitive organic semiconductors
Yu.M. Barabash, M.A. Zabolotny, N.I. Sokolov
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 051-054 (1999).

Evaluation of the efficiency of interband radiative recombination in high quality Si
A.V. Sachenko, Yu.V. Kryuchenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 055-060 (1999).

Optical constants of surface layer on gadolinium gallium garnet: ellipsometric study
A.I. Belyaeva, A.A. Galuza, T.G. Grebennik, V.P. Yuriyev
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 061-065 (1999).

On problem of the rigorous diffraction quantitative description
S. Anokhov
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 066-069 (1999).

Photoelectric peculiarities of electric photographic and holographic recording media with ionic dyes
N.A. Davidenko, A.A. Ishchenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 070-072 (1999).

Chemical dissolution of indium arsenide in the Br2-HBr solutions
Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 073-075 (1999).

Pre- and postmelting of cadmium telluride
L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk, O.V. Kopach, L.T. Turyanska
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 076-080 (1999).

Crystals Cd1-xZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties
L.V. Atroshchenko, S.N. Galkin, L.P.Gal'chinetskii, A.I. Lalayants, I.A. Rybalka, V.D. Ryzhikov, V.I. Silin, N.G. Starzhinskii
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 081-085 (1999).

Residual atmosphere in vacuum fluorescent displays
S.H. Finkelshtein, V.M. Sorokin, S.A. Rakitin, V.P. Sevostyanov
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 086-090 (1999).

Development of personal biodosimeter of UV radiation based on vitamin D photosynthesis in nematic liquid crystal matrix
A. G. Dyadyusha, I. A. Gvozdovsky, E. N. Salkova, I. P. Terenetskaya
Semiconductor physics, quantum electronics and optoelectronics, 2 (4), P. 091-095 (1999).

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This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

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