https://doi.org/10.15407/spqeo2.04.073
PACS 81,65 C.
Chemical dissolution of indium arsenide in the Br2-HBr solutions
Z.F.Tomashik, S.G.Danylenko, V.N.Tomashik, M.Yu.Kravetski
Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, ¹4.-P.73-75.-Engl. Il.: 3. Ref.: 10.
Abstract. The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be used to chemically polish InAs. Solutions containing from 20 to 30 vol.% Br2 in HBr dissolve InAs with the rate 25 to 50 m/min forming polished surfaces with etch pits. Such solutions may be used to chemically cut indium arsenide.
Key words: dissolution, hydrobromic acid, etchant, indium arsenide, bromine, diffusion stage.
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