Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (4), P. 76-80 (1999)
https://doi.org/10.15407/spqeo2.04.076

PACS: 72.20, 72.80.P

Pre- and postmelting of cadmium telluride

L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk*, O.V. Kopach, L.T. Turyanska

Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, ¹4.-P.76-80.-Ångl. Il.: 3. Ref.: 21.

Abstract. A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes that are related to defect production in crystal lattice. The crystallization processes are controlled with the melt state (structure) that depends on its maximum temperature.

Keywords: cadmium telluride, postmelting, conductivity, melt structure, polymorphic transformations.

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