https://doi.org/10.15407/spqeo3.01.011
PACS: 61.72.T, C, 66.30.L, 72.80.C, 73.61.C
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
V.B. Neimash1, O.O. Puzenko1, A.M. Kraitchinskii1, M.M. Kras'ko1, S.Putselyk1, C. Claeys2,3 and E. Simoen2
1Institute of Semiconductor Physics of NASU, 45, prospect Nauki, 03028, Kyiv, Ukraine
2IMEC, 75, Kapeldreef, B-3001 Leuven, Belgium
3KU Leuven, ESAt-INSY, 94, Kardinaal Mercierlaan, B-3001 Leuven, Belgium
Abstract. Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800oC. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion.
Keywords: silicon, thermal donors, diffusion of oxygen, annealing parameters.
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