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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 001-008.
Excitons and trions in spherical semiconductor quantum dots
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38 (044) 525 6391, e-mail: div47@isp.kiev.ua
Abstract. An original iterative procedure has been developed to obtain energy spectrum
of neutral and charged excitons (positive and negative trions) in spherical semiconductor
quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made
using the effective mass approximation and Hartree-Fock method. A combined effect of
heterointerface polarization (image force potential) and finite band-off-sets on the energy
spectrum of excitons and trions in QDs is considered for the first time. It is shown that
binding energies of excitons and trions in such QDs can be substantially larger than those
in bulk semiconductors due to spatial and “dielectric” confinement effects.
Keywords: semiconductor quantum dot, quantum size effect, image force potential,
excitons, trions, energy spectrum, binding energy.
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