Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 043-054.
https://doi.org/10.15407/spqeo9.01.043

An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications
Yuri Houk1*, Benjamin Iñiguez2, Denis Flandre3, Alexei Nazarov1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine
2Universitat Rovira i Virgili (URV), Av. Països Catalans 26, Campus Sescelades, 43007 Tarragona (Catalonia), Spain
3Université Catholique de Louvain (UCL), Bâtiment Maxwell, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium
*Corresponding author: phone/fax +380445256177, e-mail: houk@lab15.kiev.ua

Abstract. An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operation regimes of the transistor. This model is valid for all regimes of normal operation, demonstrates proper description of high-temperature behavior of the subthreshold and off-state current. The model characteristics show a good agreement with the experimental data for temperatures up to 300 °C.

Keywords: high-temperature electronics, AM SOI pMOSFET, ∞C -continuous model.

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