Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 1. P. 045-048.

The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
G.T. Horvat1, O.S. Kondratenko2, V.Ju. Loja2, I.M. Myholynets1, I.J. Rosola1, N.V. Jurkovуch1

1Uzhgorod National University, 54, Voloshyna str., 88000 Uzhgorod, Transcarpathia, Ukraine E-mail:
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
3Institute of Electronic Physics, NAS of Ukraine

Abstract. The mechanisms of formation of modified thin-film structures based on Ge- Se(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure is greatly influenced by the vapor composition, energetic state of its particles, the velocity of condensation, the temperature of the lining and that of evaporator. The 〈Ge 0.4 S 0.6 :Х〉 (Bi,Pb,In), 〈Ge 0.4 Se 0.6 :In〉 structure is characterized by the mechanism of condensation which is realized according to the type: vapor-liquid-solid phase with coalescence. The condensation mechanism in 〈Ge 0.4 S 0.6 :Al(Te)〉 structures is realized according to the type vapor-solid phase. The roughness of modified Al (2 аt. %), Bi (14 аt. %), Pb (12 аt. %), In (1 аt. %, 5 аt. %) structures is 1…13 nm, and for 〈Ge 0.4 S 0.6 :Те〉 (Те is 30.7 аt. %) structure reaches ~37 nm. The thickness and optical parameters of modified thin-film structures have been determined using the method of multiangular ellipsometry.

Keywords: modified thin-film structures, condensation mechanism, surface morphology, optical parameters.

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