Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 1. P. 027-030.
https://doi.org/10.15407/spqeo12.01.027

A compact drain current model based on Genetic algorithm computation to study the nanoscale Double-Gate MOSFETs
T. Bendih1 F. Djeffall1, M. Maguellati1, A. Benhaya1 and M. Chandi2

1LEA, Department of Electronics, University of Batna 05000, Algeria
2LEPCM, Department of Physics, University of Batna 05000, Algeria Corresponding author Fax: 002313924540, Tel: 00213 773 796503 E-mail: djeffaldzdz@yahoo.fi.

Abstract. Simulations tools thath can be applied to design nanoscale transistors in the future require a new theory and modeling techniques, which capture physics of quantum transport accurately and efficiently. In this paper, we apply the Genetic algorithm technique to study nanoscale Double-Gate MOSFETs. The developed model is particularly well-adapted to ultra-scale devices with short channel lengths and ultra-thin silicon films. Extracted parameter values reproduce I-V characteristics within 7 % RMS error for wide range of gate lengths.

Keywords: MOSFETs, Genetic algorithm

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