|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 001-007.
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
E-mail: yurigom@lab15.kiev.ua
Abstract. Capacitance-voltage (C-V) and conductance-frequency (G-ω) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high dielectric – silicon systems, including transition metal (Hf) and rare-earth metal (Gd, Nd) oxides, ternary compounds (LaLuO3) and silicate (LaSiOx), are presented. It was shown that the interface state densities can be as low as (1.5...2)x1011eV-1cm-2) for Al-HfO2-Si, Pt-Gd2O3-Si and Pt-LaLuO3-Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor.
Keywords: high-k dielectric, dielectric-semiconductor interface.
| ||