Abstract


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 032-034. DOI: https://doi.org/10.15407/spqeo15.01.032 Peculiarities of valence band formation in As-Ge-Se semiconductor glasses M. Vakiv¹, R. Golovchak¹, D. Chalyy², M. Shpotyuk^1,3, S. Ubizskii³, O. Shpotyuk¹ ¹Scientific Research Company „Carat”, 212, Stryiska str., 79031 Lviv, Ukraine ²Lviv State University of Vital Activity Safety, 35, Kleparivska str., 79000 Lviv, Ukraine ³Lviv Polytechnic National University, 12, Bandery str., 79013 Lviv, Ukraine Abstract. Peculiarities of valence bands formation in semiconductor glasses have been investigated within As_xGe_xSe_1-2x cut of glass forming region by high-resolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasses correlates well with previously obtained data for constituent glasses of binary Ge_xSe_1-x and As_xSe_1-x systems. In particular, increase in х leads to the decrease in the intensity of bands at ~2 eV responsible for Se lp-states. The valley at ~3 eV is filled by electronic states originated from Se-Ge and Se-As bonds. An accompanying decrease in the intensity of the band at ~5 eV is explained by a decrease in Se 4p bonding states associated with Se-Se covalent bonds. Keywords: chalcogenide vitreous semiconductors, high-resolution X-ray photoelectron spectroscopy, valence band. Full Text (PDF) Back to N1 Volume 15