Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 032-034.

Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
M. Vakiv1, R. Golovchak1, D. Chalyy2, M. Shpotyuk1,3, S. Ubizskii3, O. Shpotyuk1

1Scientific Research Company „Carat”, 212, Stryiska str., 79031 Lviv, Ukraine
2Lviv State University of Vital Activity Safety, 35, Kleparivska str., 79000 Lviv, Ukraine
3Lviv Polytechnic National University, 12, Bandery str., 79013 Lviv, Ukraine

Abstract. Peculiarities of valence bands formation in semiconductor glasses have been investigated within AsxGexSe1-2x cut of glass forming region by high-resolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasses correlates well with previously obtained data for constituent glasses of binary GexSe1-x and AsxSe1-x systems. In particular, increase in х leads to the decrease in the intensity of bands at ~2 eV responsible for Se lp-states. The valley at ~3 eV is filled by electronic states originated from Se-Ge and Se-As bonds. An accompanying decrease in the intensity of the band at ~5 eV is explained by a decrease in Se 4p bonding states associated with Se-Se covalent bonds.

Keywords: chalcogenide vitreous semiconductors, high-resolution X-ray photoelectron spectroscopy, valence band.

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