Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 077-079.
DOI: https://doi.org/10.15407/spqeo15.01.077

Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
V.M. Ermakov1, V.V. Kolomoets1, L.I. Panasyuk1, P.F. Nazarchuk2, L.V. Yashchynskiy2

1V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine, E-mail: ekol@isp.kiev.ua
2 Lutsk National Technical University, 75, Lvivska str., 43018 Lutsk, Ukraine, E-mail: leonidpnsk@ukr.net

Abstract. The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The f-transitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence log ρ vs. log T for the temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley scattering occurs, while the observed is tha decisive role of f–transitions to this scattering.

Keywords: silicon, electron mobility, uniaxial strain, g-transitions, f-transitions, tenso-resistive effect.

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