Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 001-006.
https://doi.org/10.15407/spqeo17.01.001

                                                                 

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n + -n doping step
A.V. Sachenko 1 , A.E. Belyaev 1 , N.S. Boltovets 2 , A.O. Vinogradov 1 , V.A. Pilipenko 3 , T.V. Petlitskaya 3 ,V.M. Anischik 4 , R.V. Konakova 1 , T.V. Korostinskaya 2 , V.P. Kostylyov 1 , Ya.Ya. Kudryk 1 , V.G. Lyapin 1 , P.N. Romanets 1 , V.N. Sheremet 1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine Phone: 38(044) 525-61-82; Fax: 38(044) 525-83-42; e-mail: konakova@isp.kiev.ua
2 State Enterprise Research Institute "Orion", 03057 Kyiv, Ukraine
3State Centre "Belmicroanaliz", subsidiary of R&D Centre "Belmicrosystems"
Open Joint Stock Company "Integral", 220108 Minsk, Belarus
4 Belarusian State University, 220030 Minsk, Belarus

Abstract. We present both theoretical and experimental temperature dependences of contact resistivity p c (T) for ohmic contacts to the silicon n + -n-structures whose n + -layer was formed using phosphorus diffusion or ion implantation. The p c (T) dependence was measured in the 125-375 K temperature range with the transmission line method, with allowance made for conduction in both the n + -layer and n + -n doping step.

Keywords:ohmic contact, metallization, doping step.

Manuscript received 24.10.13; revised version received 11.12.13; accepted for publication 20.03.14; published online 31.03.14.

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