Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 085-096.


Electron relaxation and mobility in the inverted band quantum well

Ye.O. Melezhik*, J.V. Gumenjuk-Sichevska**, F.F. Sizov

V.E. Lashkaryov Institute of semiconductor physics of NASU, 03028, Nauki av., 41, Kiev, Ukraine, +38(044)-525-18-10 *Corresponding author e-mail:; **e-mail

Abstract. Electron relaxation processes at nitrogen temperatures in CdTe/Hg1- xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons and interfaces were taken into account. It was found that for undoped and lightly doped QWs (concentration of background n-type charged impurities in the well is 1014 - 1016 cm-3 or less), for x close to the band inversion value 0.16, the electron mobility grows considerably when the QW width decreases. This mobility is higher for samples with smaller concentrations of charged impurities.

Keywords: quantum well, mobility, HgCdTe, terahertz range.

Manuscript received 11.10.13; revised version received 15.01.14; accepted for publication 20.03.14; published online 31.03.14.

Full Text (PDF)

Back to Volume 17 N1