Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 1. P. 001-011.


Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer
V.V. Korotyeyev

V. Lashkaryov Institute of Semiconductor Physics, Department of Theoretical Physics,
41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail:

Abstract. Steady-state electric characteristics of quantum heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with δ-doped barriers have been analyzed in this work. It has been shown that high doping additional low-conductive channels are formed in the barrier layers. Current-voltage characteristics of the structure were obtained in the wide interval of applied electric fields up to several kV/cm being based on the solution of Boltzmann transport equation. It has been found that in the electric fields higher than 1 kV/cm the effect of exchange of the carriers between the high-conductive channel of the GaAs quantum well and the channels in the AlGaAs barriers becomes essential. This effect gives rise to the appearance of the strongly nonlinear current-voltage characteristics with a portion of negative differential conductivity. The developed model of heterostructure is adequate to those recently fabricated and studied in the paper [1]. The obtained results explain some observation of this paper. It has been found that the effect of electron real-space transfer takes place at both low temperatures and room temperatures, which opens perspectives to design novel type nanostructured current controlled devices.

Keywords: quantum heterostructures, real-space transfer, electron transport.

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