Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (1), P. 010-018 (2022).

The free path and generation rate of fast-moving electron interacting with dielectric media
M.E. Yelisieiev

Taras Shevchenko Kyiv National University, 64, Volodymyrska str., 01601 Kyiv, Ukraine

Abstract. In the framework of macroscopic continuous medium approach, we have studied interaction between a fast-moving charged particle and dielectric or semiconducting media with low energy electrically active excitations. The excitations contribute to frequency dispersion of the media dielectric permittivity. Two types of processes induced by a moving charged particle have been considered: electron-hole generation under interband transitions and excitation of polar optical phonons. For both processes, we calculated and analyzed the time- and space-dependent electric potential generated by the charged particle, polarization of the media, energy losses of the particle and other important constituents of the interaction patterns. Obtained results can contribute to deeper understanding of the charged particle beams interaction with a semiconducting medium, as well as may be useful for versatile applications of charged beams.

Keywords:free path, electron-hole generation, optical phonon, interband transition, electron beam.

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