Semiconductor Physics, Quantum Electronics & Optoelectronics, 27 (1), P. 117-123 (2024).

Optical and electrical properties of zinc oxide nanofilms deposited using the sol-gel method

A.V. Fedorenko1*, K.M. Bozhko2, N.V. Kachur1, A.V. Kosiakovskiy3, V.P. Maslov1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prosp. Nauky, 03680 Kyiv, Ukraine
2National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”
37, prosp. Peremohy, 03680 Kyiv, Ukraine
3Institute of Armament and Military Equipment of the Armed Forces of Ukraine,
28 B, prosp. Povitroflotskyi, 03049 Kyiv, Ukraine
*Corresponding author e-mail:

Abstract. This paper is aimed at investigation of electrical properties inherent to zinc oxide (ZnO) nanofilms prepared using the sol-gel method. The experimental samples consisted of a substrate (25×25×1 mm) made of microscopic glass brand “Voles” covered with the above films of the thickness ranging from 50 to 150 nm. Optical characterization was performed to calculate the bandgap width and to confirm the presence of zinc oxide in the nanofilms and demonstrate their optical activity. An oscillographic method was used to measure the surface resistance of nanofilms by using a galvanic elastic contact, which allowed determining their high electrical quality and resistance. Simultaneously, the high mechanical strength of these nanofilms was ascertained under the action of the elastic contact, enduring a series of 5 to 10 measurements without noticeable changes in resistance. Measurements were also carried out to observe the change in the electrical resistance of ZnO films, when they were heated from 25 up to 100 °C. The obtained results have indicated the potential of these nanofilms for applications in the fields of electronics, photoelectronics and sensor technologies.

Keywords:semiconductor zinc oxide, sol-gel method, nanofilm, transmittance spectrum, surface resistance, elastic galvanic contact.

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