PACS 81.65 C

Dissolution of InAs in HNO3-HBr-H2O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO3]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The dissolution rate of InSb in these solutions is rather low, and the etched surface is covered with a friable sediment. HNO3 -HBr-H2O solutions can be employed for a dynamic chemical polishing of InAs with a variable etching rate.

Keywords: dissolution, etchant, indium arsenide, nitric acid, hydrobromic acid, diffusion stage, kinetic limitations.