https://doi.org/10.15407/spqeo4.02.082
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 2. P. 82-84.
PACS: 61.72.Y; 72.40; 81.05.C; 81.65.T
Increase of planar homogeneity of multi-silicon
structures by gettering treatments
V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
Prospect Nauki 45, Kiev 03028, Ukraine
Abstract. Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of the samples from recombination active impurities are achieved. Possible mechanisms of the homogenization are briefly discussed.
Keywords: gettering, planar inhomogeneity, diffusion length, surface photovoltage.
Paper received 27.03.01; revised manuscript received 29.03.01; accepted for publication 15.05.01. .
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