https://doi.org/10.15407/spqeo4.02.093
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 2. P. 93-105.
PACS: 07.07.D, 07.57.H, 81.05.J, 84.40.D
Technology and experimental studies of contacts for microwave diodes based on interstitial phases
N.S. Boltovets1, V.N. Ivanov1, R.V. Konakova2, A.M. Kurakin2, V.V. Milenin2,
E.A. Soloviev2, G.M. Verimeychenko1
1State Scientific & Research Institute «Orion», 8a Eugene Pottier St., Kyiv, 03057, Ukraine
Tel./Fax: (380-44) 456-05-48; E-mail: bms@i.kiev.ua
2Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine
Tel.: (380-44) 265-61-82; Fax: (380-44) 265-83-42; E-mail: konakova@eee.semicond.kiev.ua
Abstract. We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide and silicon epitaxial structures that are used to produce microwave diodes. We investigated the properties of sputtered films and metal-semiconductor interfaces, as well as electrophysical parameters of contact structures and IMPATT diodes. The contact structures based on titanium borides and nitrides and zirconium borides are shown to have high thermal stability.
Keywords: thin TiBx films, thin TiNx films, thin ZrBx films, thin NbNx films, rapid thermal annealing, contact structure, microwave diode, reliability of IMPATT diodes.
Paper received 19.01.01; revised manuscript received 31.01.01; accepted for publication 16.02.01.
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